Study of multi-ON states in nonvolatile memory based on metal-insulator- metal structure
نویسندگان
چکیده
Various mechanisms have been proposed to interpret switching effect in thermally evaporated organic memory devices. In this work, we demonstrate a nonvolatile memory device having tristates, one OFF state and two different ON states lower-ON state, higher-ON state in the metal-insulator-metal MIM structure. Detailed study has revealed that different switching mechanisms are responsible for these two stages of switching: filament formation is the dominant mechanism for switching from the OFF state to the lower ON state while Poole–Frenkel effect governs the switching from the lower-ON state to the higher-ON state. © 2009 American Institute of Physics. doi:10.1063/1.3263155
منابع مشابه
Propose, Analysis and Simulation of an All Optical Full Adder Based on Plasmonic Waves using Metal-Insulator-Metal Waveguide Structure
This paper proposes a full adder with minimum power consumption and lowloss with a central frequency of 1550nm using plasmonic Metal-Insulator-Metal (MIM)waveguide structure and rectangular cavity resonator. This full adder operates based onXOR and AND logic gates. In this full adder, the resonant wave composition of the firstand second modes has been used and we have ob...
متن کاملDesign and Simulation of a Metal-Insulator-Metal Filter Based on Plasmonic Split Ring
In this paper, a plasmonic filter made of a split ring, two U-shaped structures and two straight waveguides is designed and investigated. In the proposed structure, the split ring and U-shaped structures are situated between straight waveguides. Simulations are done based on FDTD method. Split ring, U-shaped structures and straight waveguides are made of air in the silver background. In the pro...
متن کاملMultilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications
Articles you may be interested in Multi-layered nanocomposite dielectrics for high density organic memory devices Appl. TiO 2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application J. Nonvolatile memory cell effect in multilayered Ni 1 − x Fe x self-assembled nanoparticle arrays in polyimide
متن کاملNonvolatile Bio-Memristor Fabricated with Egg Albumen Film
This study demonstrates the fabrication and characterization of chicken egg albumen-based bio-memristors. By introducing egg albumen as an insulator to fabricate memristor devices comprising a metal/insulator/metal sandwich structure, significant bipolar resistive switching behavior can be observed. The 1/f noise characteristics of the albumen devices were measured, and results suggested that t...
متن کاملResistive Random Access Memory (ReRAM): A Metal Oxide Memory Cell
We review the recent progress in the ReRAM technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. We first provide a brief historical overview of the research in this field. We also provide a technological overview and the epoch-making achievements, followed by an account ...
متن کامل